A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results.
比较逻辑比较存储单元的阈值电压与至少一对分数参考电压，以生成比较结果。
If the noise level is just below the threshold needed to flip the state of the system, even a tiny input voltage is enough to change the system's state.
如果噪音的等级正好比转换系统状态的极限低，一个非常小的输入电压就足以改变系统的状态。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
Then , an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects.
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
In conventional CMOS charge pump circuits, the pumping high voltage is limited by MOS threshold voltage, so that it can not use less cascade stages to pull up a high voltage which we want to generate.
在传统的CMOS电荷泵电路中，电荷泵输出的电压受MOS管的阈值电压限制，所以当要求电荷泵的输出电压较高时，则不得不连很多阶来达到要求。
It compensates for the temperature characteristics of the resistor and the threshold voltage VTH in such a way that the reference current has small temperature dependence.
主要利用电阻的温度系数与阈值电压VTH温度系数相同的特性实现温度补偿原理。
A disadvantage is in the increased threshold voltage.
缺点是使阈值电压升高。
Its function is to provide a latching switch action upon sensing an input threshold voltage, with reset accomplished by an external clock signal.
它的功能是当感应到输入电压界限时提供一个锁存开关，通过外部时钟信号完成复位。
The simulator contains a threshold detector to eliminate faulty discharge counts over its wide operating voltage range. Only valid HV discharges are indicated.
该模拟器包含一个放电门限检测器，在整个操作电压范围内可以消除放电计数错误，即仅显示有效的高压放电。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
推导了了一个短沟道MOST阈值电压温度系数表达式；
Recondition is a slow, deep discharge that drains the cell to a voltage threshold below one volt must be discharged to at least 0.6 volts per cell to dissolve the more resistive crystalline build-up.
恢复是一种缓慢的，深度的放电过程，它放电使电芯达到一个电压极限，一个电芯一定要由一伏的电压至少放电至0.6伏以下，才能溶散更多的抗性晶体。
Adding 3% of these compounds to a polar and a nonpolar liquid crystal mixtures significantly reduces their threshold voltage while only causes a modest increase in viscosity.
往一种极性和非极性液晶混合物中添加3%的这些化合物，可以大大降低液晶混合物的阈值电压，而只引起粘度的小量增加。
A read voltage is changed by the shifted threshold voltage level to read user data using the changed read voltage.
以及利用偏移阈电压电平改变读取电压，以使用改变的读取电压读取用户数据。
A novel under-voltage lockout circuit is proposed which could generate reference voltage and bias current itself, and could stabilize lockout threshold voltage and hysteresis quality.
提出了一种能够自产生基准电压和偏置电流，并且锁定阈值电压和迟滞量稳定的新型欠压锁定电路。
The threshold voltage is positive after a program operation, in what may be defined as the logic "0" state.
在编程操作之后阈值电压为正，其可界定为逻辑“0”状态。
When VVMOSFET and NMOSFET are integrated into a monolithic integrated circuit, the values of threshold voltage tolerance between them are estimated theoretically and compared with process tests.
本文介绍了VVMOSFET和NMOSFET单片集成时阈值电压容差的理论估算和工艺试验结果，二者符合得较好。
Deduced has been a relationship between the threshold voltage of MOSFET and the radiation dose rate.
计算了MOSFET阈电压与辐射剂量率之间的关系。
A pixel for compensating for the threshold voltage of a drive transistor and the voltage drop of a first power source are provided.
所述像素用于补偿驱动晶体管的阈值电压和第一电源的压降。
A modified algorithm for evaluation of the threshold voltage in MOSFET with non-uniformly doped substrate is presented.
提出一种改进了的计算衬底非均匀掺杂mos器件开启电压的算法。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
Using the averaged switch modeling approach, a non-linear large-signal averaged model of non-ideal PWM switch is derived, taking into account all parasitic resistances and threshold voltage of diode.
运用平均开关建模法，建立非理想PWM开关的非线性大信号平均模型，包含全部寄生电阻和二极管的正向压降。
One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced.
介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。
One exemplary embodiment includes using a lower threshold voltage verify level for select physical states when programming the last word line to be programmed for a string during a program operation.
一示范性实施例包括：当在编程操作期间对一串中的将被编程的最末字线进行编程时，使用用于选择物理状态的较低阈值电压检验电平。
If the voltage exceeds a threshold, the switch is turned off.
以及如果该电压超过第一阈值，则关断该开关。
In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
The transistor element comprises a predefined threshold voltage.
晶体管元件包括预定的阈值电压。
The first sub pixel has a threshold value signal voltage lower than that of the second sub pixel.
第一副像素的阈值信号电压比第二副像素的阈值信号电压低。
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