A design approach for low power CMOS low noise amplifier (LNA) is presented and it is compared with the traditional LNA design method.
针对低功耗电路设计的需求，提出了一种低功耗约束下CMOS低噪声放大器的设计方法，并与传统的设计方法进行了对比。
On the base of theory analysis, a LNA and a mixer of a receiver chip used in compass navigation satellite system have been designed.
在理论分析的基础上，本文设计了一个应用于北斗卫星导航系统接收机芯片中的低噪声放大器和下变频混频器。
In this paper, we present a detailed analysis of the LNA Architecture.
本文中，我们将对该结构低噪声放大器进行具体的分析。
In this paper, the traditional cascode structure of CMOS LNA is considered as a two-stage amplifier and inter-stage matching network is introduced accordingly.
本文也对CMOS低噪声放大器进行了分析，将传统共源共栅结构看作二级放大器级联形式，并由此引入级间匹配网络。
The LNA USES a series inductor output match.
同时使用串联电感输出匹配方法。
A design approach of low noise amplifiers (LNA) based on s parameter is studied.
探讨了使用s参数设计低噪声放大器(LNA)的方法。
A wideband low noise amplifier (LNA) topology for ultra-wideband (UWB) system is proposed by combining PCSNIM de-sign flow with a resistive shunt-feedback.
结合电阻并联反馈，利用PCSNIM流程设计了一个用于超宽带（UWB）系统的宽带LNA电路。
Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA.
在此基础上，通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响，进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。
A low noise amplifier (LNA) and a mixer realized in standard digital CMOS technology are presented in this thesis.
本文设计了基于标准的数字CMOS工艺的低噪声放大器和混频器。
The RF5521 FEM combines a low noise amplifier (LNA) with bypass and a single pole three throw (SP3T) switch.
有限元法的RF 5521结合低噪声旁路放大器(LNA)和一个单极三掷(SP3T)开关。
The noise figure of a microwave or millimeter-wave system basically lies on the noise of the front amplifier, so the Low Noise Amplifier (LNA) plays critical role for the receiving system.
微波、毫米波系统的噪声系数基本上取决于前级放大器的噪声系数，所以低噪声放大器是接收系统中相当重要的部件。
Based on a direct-conversion architecture, the receiver integrates LNA, I/Q mixer, DC-offset removal filter, baseband amplifier and channel-select filters on a single chip.
基于直接下变频的系统架构，接收机集成了低噪声放大器、I/Q下变频器、去直流偏移滤波器、基带放大器和信道选择滤波器。
Due to semiconductor process we must trade off between input voltage standing wave ratio (VSWR) and Noise Figure. In this paper, a balanced LNA is adopted.
由于半导体工艺制程的关系，一般来说低噪声放大器噪声匹配和输入端驻波比匹配是矛盾的。
A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
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