介绍了对某型号高频大功率晶体管进行的失效分析。
In this paper, the failure analysis of a type of high frequency power transistor is introduced.
这一过程的一个主要特点是，它同时生产PNP和NPN晶体管，这使得高频宽带设计，如在HA- 5033，实用。
A major feature of this process is that it produces both PNP and NPN high frequency transistors which makes wide bandwidth designs, such as the HA-5033, practical.
本文介绍一种简便分析典型晶体管高频电路的方法。
A simple approach is presented to analyse a typical high frequency transistor stage.
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
介绍了高速中规模集成数字频率合成器、晶体管高频大功率放大器的设计。
The high-speed digital frequency mixer made of medium-scale integrated circuits and the design of a high power transistor amplifier are also presented.
介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。
Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.
渡越时间是限制晶体管高频工作能力的主要因素。
Transit time is the primary factor which limits the ability of a transistor to operate at high frequency.
提出了为清晰、稳定地获得高频下晶体管特性曲线、S参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。
A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, s parameters and the frequency matching parameters with the transistor individuality.
大功率晶体管驱动不受高频影响。
High-power transistor drive is not affected by high frequencies.
大功率晶体管驱动不受高频影响。
High-power transistor drive is not affected by high frequencies.
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