高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
本发明的有机半导体材料与噻吩齐聚物相比具有高的热稳定性及环境 稳定性、高纯度和高迁移率等；
The organic semiconductor material of this invention has high thermal stability, environment stability, high purity and high mobility. ect compared with thiophene oligomer;
本发明的有机半导体材料与噻吩齐聚物相比具有高的热稳定性及环境 稳定性、高纯度和高迁移率等；
The organic semiconductor material of this invention has high thermal stability, environment stability, high purity and high mobility. ect compared with thiophene oligomer;
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