半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
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