提出一种输出低于1V的、无电阻高电源抑制比的CMOS带隙基准源(BGR)。
CMOS bandgap reference (BGR) without a resistor, with a high power supply rejection ratio and output below 1v is proposed.
微功耗、低工作电压、高电源抑制比是在电源芯片中的基准源设计过程中遇到的主要挑战。
Low power, low voltage and high PSRR are the main challenges in designing bandgap reference for switching regulator.
用较简单的电路形式实现了低功耗和高电源抑制比的PTAT电流产生电路和CTAT电流产生电路。
We obtained PTAT and CTAT current generator with low power consumption and high PSRR, which in a simple circuit structure.
仿真结果表明，该电路不仅具有良好的温度线性度，还具有高电源抑制比，满足本文DAC的设计要求。
The simulation result shows that the circuit not only has good temperature coefficient, but also high PSRR, which meet the requirements of the design of DAC mentioned in this paper.
基于带隙基准的基本原理，设计了一种高精度、高电源抑制比(PSRR)、低温度系数(TC)的带隙基准电压源。
Based on the basic principle of bandgap reference, design a high precision, high power supply rejection ratio (PSRR) and low temperature coefficient (TC) bandgap voltage reference.
其中带隙基准采用指数曲率补偿作为非线性补偿，具有很好的温度性能和高电源电压抑制比；
The bandgap reference uses the exponential curvature compensation as the nonlinear compensation and has the better temperature characteristic and high PSRR(Power Supply Rejection Ratio);
其中带隙基准采用指数曲率补偿作为非线性补偿，具有很好的温度性能和高电源电压抑制比；
The bandgap reference uses the exponential curvature compensation as the nonlinear compensation and has the better temperature characteristic and high PSRR(Power Supply Rejection Ratio);
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