介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术。

A backside growth technique of thick porous silicon layers for the on-chip RF integrated inductor is presented.

youdao

介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术。

A backside growth technique of thick porous silicon layers for the on-chip RF integrated inductor is presented.

youdao