在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。

In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.

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在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。

In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.

youdao