提供了一种具有自调整顶栅结构的晶体管及其制造方法。
The invention provides a transistor capable of self-aligning top gate structure and a method of manufacturing the same.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
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