研制成功一种新型混合式面发射半导体激光器。
A new type of surface emitting semiconductor laser diodes is fabricated.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically;
本文报道了一种新型高功率径向桥电极垂直腔面发射半导体激光器（VCSEL）的研制。
We report the fabrication of a novel high-power vertical-cavity surface-emitting laser (VCSEL) with radial bridge electrodes in this letter.
实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
本文评述竖直腔面发射半导体激光器的结构、晶体生产、器件制备、器件特性以厦这种激光器的应用和发展前景。
The structure, crystal growth, fabrication and characteristics of the vertical—cavity surface—emitting lasers (VCSEL) as well as their applications and prospects are reviewed in this paper.
利用数值模拟的方法研究了电流调制下偏置电流和调制频率对垂直腔面发射半导体激光器(VCSEL)混沌动力学特性的影响。
The influence of bias current and modulation frequency on chaos dynamics of vertical-cavity surface-emitting laser (VCSEL) subject to direct current modulation is investigated by numerical simulation.
利用数值模拟的方法研究了电流调制下偏置电流和调制频率对垂直腔面发射半导体激光器(VCSEL)混沌动力学特性的影响。
The influence of bias current and modulation frequency on chaos dynamics of vertical-cavity surface-emitting laser (VCSEL) subject to direct current modulation is investigated by numerical simulation.
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