本发明公开了一种形成半导体结构的方法，这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
本发明公开了一种形成半导体结构的方法，这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
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