结果发现，这些快速记忆装置中的晶体管一旦被冲入了它们无法驱散的静电电荷，它们就会出毛病。
It turns out that transistors in these flash-memory devices are prone to being gummed up with electrostatic charge that they cannot dissipate.
结果发现，这些快速记忆装置中的晶体管一旦被冲入了它们无法驱散的静电电荷，它们就会出毛病。
It turns out that transistors in these flash-memory devices are prone to being gummed up with electrostatic charge that they cannot dissipate.
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