辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
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