无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
本文提出了高压低饱和压降gtr的最佳设计方法。分析表明，高压低饱和压降晶体管采用集电区穿通性设计比非穿通性设计有利。
The best design method of high voltage and low saturation voltage GTR presented in this paper shows that the collector region through design is better than non-through design.
本文提出了高压低饱和压降gtr的最佳设计方法。分析表明，高压低饱和压降晶体管采用集电区穿通性设计比非穿通性设计有利。
The best design method of high voltage and low saturation voltage GTR presented in this paper shows that the collector region through design is better than non-through design.
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