本发明涉及半导体激光器技术领域，特别是该器件内集成了电吸收调制器和分布布拉格反射半导体激光器的制作方法。
In particular, the invention is related to method for preparing semiconductor laser device with electroabsorption modulator and distributing Bragg reflection being integrated.
本发明涉及半导体激光器技术领域，特别是该器件内集成了电吸收调制器和分布布拉格反射半导体激光器的制作方法。
In particular, the invention is related to method for preparing semiconductor laser device with electroabsorption modulator and distributing Bragg reflection being integrated.
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