半导体光放大器（SOA）由于体积小、成本低、易与其他光电器件集成，在未来的全光通信系统中将发挥重要的作用。
Semiconductor optical amplifier (SOA) is an important device in future all-optical communications due to its small volume, low cost and easy integration with other optoelectronic devices, etc.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
主要用于微电子行业，被广泛应用于半导体器件、集成电路等分装材料。
It is mainly used in microelectronic Industry. Widely used for the encapsulant of semiconductors and integrated circuits.
半导体用于制作像二极管、晶体管以及集成电路等电子器件。
Semiconductors are used in the manufacture of electronic devices such as diodes, transistors, and integrated circuits.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
本发明公开了一种半导体器件与集成电路硅单晶废弃片的回收利用方法。
The invention discloses the method of reclaiming and utilizing the silicon single crystal waste of semiconductor device and integrated circuit.
由此能有效地防止由于施加到半导体集成电路器件的卡路里增加产生的线断开。
Therefor, it can effectively prevent a wire disconnection generated due to an increase of calorie applied to a semiconductor integrated circuit device.
本发明所环氧树脂组合物可以有效地用于封装各种类型的半导体器件，如晶体管、集成电路。
The epoxy resin composition can be used for effectively packaging various semiconductor devices, such as transistors and integrating circuits.
半导体器件。分立器件和集成电路。第8部分：场效应晶体管。
Semiconductor devices. Discrete devices and integrated circuits. Part 8: field-effect transistors.
介绍了一种使用新型测温集成电路ds1820和半导体致冷器件组成的简单精巧的温度测控系统。
This paper introduces a simple and easy temperature measuring and controlling system made up of a new -type temperature-measuring integrated circuit DS1820 and semiconductor refrigerator.
讨论了在检测半导体器件和集成电路芯片时，不同研磨倾斜角度对扩展电阻量值的影响。
The effects of choosing lapping bevel Angle during testing semiconductor devices and LSI chips by spreading resistance technique on measurement accuracy have been investigated in this paper.
该试剂用于清除匀胶后残留于硅片边缘及背面的光刻胶，已经广泛应用于中、大规模集成电路及其它半导体器件的生产。
The chemical is widely used in the production of LSI, VLSI and other semiconductors to remove photoresist edge bead that occurs during typical spin coat wafer processing.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
半导体器件。集成电路。第20部分：薄膜集成电路及混合薄膜集成电路的总规范。
Semiconductor devices. Integrated circuits. Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits.
半导体器件。集成电路。第3部分：模拟集成电路。
Semiconductor devices. Integrated circuits... Part 3: Analogue integrated circuits.
本发明涉及半导体激光器技术领域，特别是该器件内集成了电吸收调制器和分布布拉格反射半导体激光器的制作方法。
In particular, the invention is related to method for preparing semiconductor laser device with electroabsorption modulator and distributing Bragg reflection being integrated.
本课程是集成电路工程领域工程硕士的专业基础课程，旨在向学生介绍半导体物理与器件的基础知识。
This course is the key fundamental course for engineering graduates majored IC engineering, and to teach the fundamentals of semiconductor physics and devices.
光子器件存在三维结构，比二维结构的半导体集成要简单得多。
Photon parts of an apparatus has three-dimensional structure, the semiconductor that compares 2 dimension structure is compositive want complex much.
集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。
Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.
首先对RTD与化合物半导体HEMT,HBT以及硅cmos器件的集成工艺进行了介绍。
The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
On the basis of the study of the single circular groove guide and symmetric double circular groove guide, a new structure, asymmetric double circular groove guide, has been put forward.
半导体器件与集成电路抗静电放电(esd)。
半导体器件与集成电路抗静电放电(esd)。
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