系统地研究了薄膜的微结构、磁性、隧道磁电阻效应（TMR）和巨霍耳效应（GHE）。
The microstructure and tunneling magneto-resistance(TMR) as well as the giant Hall effect(GHE) were systematically investigated.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
研究MTJ样品的隧道结磁电阻(TMR)效应。
Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
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