用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。

The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.

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用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。

The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.

youdao