模拟结果表明方位界面也是波阻抗界面。
The modeling result demonstrates that the azimuthal interface is also wave impedance interface.
从根本上来说，技术界面与人类用户之间的“阻抗失配”问题需要由用户解决而非技术专家。
Ultimately, the 'impedance mismatch' problem between our technology interfaces and human users will be decided more by the users than the technologists.
采用交流阻抗法研究硫化矿碳糊电极体系在氯化钠电解液中的界面动力学行为。
The interface dynamic behaviors of sulfide mineral carbon paste electrodes in NaCl electrolyte were investigated by alternating current impedance technique.
本文依据双传输线模型给出电极阻抗和界面电位分布的计算方法。
The calculations of the electrode impedance and interfacial potential distributions in accordance with the model of the double transmission lines were presented.
可以提供界面波阻抗参数。
The parameters of wave impedance at interface can be provided.
每遇到一个反射面时，回声在示波器的屏幕上显示出来，而两个界面的阻抗差值也决定了回声的振幅的高低。
Each encounters a reflective surface, the echo on the oscilloscope screen displayed the impedance difference between the two interfaces also determine the level of echo amplitude.
在P波入射时，地下同一点产生的P P波和PSV波是入射角、界面两侧纵波阻抗和横波阻抗的函数，并且两者是耦合的。
When P wave incidents, The P-P wave and P-SV wave created from the same point are both functions of incidence angle, and of the media above and below the interface, Vp and Vs they are coupled.
在地球物理中，反射指的是地震能量或信号在反射面（具有不同声阻抗的地层分界面）处按照斯奈尔定律发生的回转。
In geophysics, reflection refers to the seismic energy or signal that returns from an interface of contrasting acoustic impedance, known as a reflector, according to Snell's law.
界面的反射系数取决于界面两侧岩石的声阻抗差。
The reflection coefficient of an interface depends on the contrast in acoustic impedance of the rock on either side of the interface.
同时利用某些平均阻抗和特征阻抗的一维各向同性介质反演亦可获得较为可信的电性分层界面。
Meanwhile the one-dimensional isotropic inversion could obtain reliable electrical layer boundaries by using some average and characteristic impendences, if the method is suitable.
用交流阻抗法研究了膜的传导机理，实验结果表明界面阻抗受扩散过程控制。
The conductivity mechanism of this membrane was studied with A. C. impedance method, the experimental results prove that the impedance of the boundary is controlled by the diffusion process.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
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