设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
应用推荐