晶体管元件包括预定的阈值电压。
The transistor element comprises a predefined threshold voltage.
阈值电压的逻辑电平降解能力的检查。
Voltage threshold capability checks for logic level degradation.
增加体区掺杂，以提高背栅阈值电压；
The body region was doped high to increase the back gate threshold voltage.
缺点是使阈值电压升高。
阈值电压的实验与理论分析结果吻合较好。
The results of experiment tally well with that of theoretical analysis.
降低发射阈值电压。
通过公式计算得出的电路阈值电压与模拟结果一致。
The calculated threshold voltages of the circuit are conformed to the simulation results.
提出了一种DMOS辐照正空间电荷阈值电压模型。
A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种不同阈值电压反相器控制的传输门组合结构。
A combinational structure of the transmission gate in the inverter control with different threshold voltages is presented.
推导了了一个短沟道MOST阈值电压温度系数表达式；
We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
在编程操作之后阈值电压为正，其可界定为逻辑“0”状态。
The threshold voltage is positive after a program operation, in what may be defined as the logic "0" state.
在存储多个数据状态的情况下，阈值电压窗被划分为状态的数目。
In the case of storing multiple states of data, the threshold voltage window is divided into the number of states.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
得到了阈值电压和比例差分峰值，界面陷阱密度和应力时间的关系。
The relationship between the threshold voltage and the peak of proportional difference, and between the interface trap density and stress time are also acquired.
介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。
One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced.
目的研究金刚石场发射阴极处理工艺对场发射电流和阈值电压的影响。
Aim To study the effects of different dispersers and heat-treatment under different plasma atmospheres on field emission current and threshold value electric field.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
当达到复位芯片的阈值电压时，一旦达到芯片的延时时间便输出复位信号。
When it reaches the threshold voltage of the reset chip, it then asserts the reset once it reaches the time-out period of the chip.
通过对自产生的基准电压进行温度补偿确保了锁定阈值电压和迟滞量稳定。
The temperature compensated reference voltage stabilizes the lockout threshold voltage and hysteresis quality.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
比较逻辑比较存储单元的阈值电压与至少一对分数参考电压，以生成比较结果。
The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
主要利用电阻的温度系数与阈值电压VTH温度系数相同的特性实现温度补偿原理。
It compensates for the temperature characteristics of the resistor and the threshold voltage VTH in such a way that the reference current has small temperature dependence.
研究外电场作用下向列液晶盒的阈值电压随锚定强度、弹性系数等各种参数的变化关系。
This article studies the change of threshold voltage and saturation voltage affected by external electric field with the change of various parameters such as anchor strength, elasticity coefficient.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
理论分析表明，阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响。
The influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.
本文对二进制数字基带传输系统的阈值电压进行了图象上的解释，从而使该概念的意义更加清晰。
In this paper, the threshold voltage of binary digital baseband transmission system on graph is explained, so the concept's meaning is more clear.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
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