一旦器件(晶闸管)导通，门极电流即可去掉。
Once the device begins to conduct, it is latched on and the gate current can be removed.
一如代数与算术学，致富的学问也是一门极精准的学问。
THERE is a science of getting rich, and it is an exact science, like algebra or arithmetic.
简述了门极换流晶闸管(GCT)的耐压结构及其特点。
The enduring voltage structure and features of Gate Commutated Thyristor (GCT) were analyzed briefly.
这种情况下对主晶闸管门极采取保护措施显得尤为必要；
Finally protection methods have been provided in this paper which includes over cu…
在分析gto内部机理的基础上，用无源器件建立了GTO门极模型。
The gate model is formed with passive devices on the basis of analyzing the internal mechanism of GTO.
限流过程包括两次电流转移：快速开关至门极关断晶闸管，再至限流电阻。
The operation of the SCCL involves two current transferring processes, i. e. the fast switch transfers the short circuit current to the GTO and then the GTO to the limiting resistor.
给出了门极等位铝条的设计原则；提出了解决MCT关断时边缘效应的方法。
The design principle of the gate equivalent Al is proposed and the way to solve the turning off edge effect is given.
这样，当晶闸管重新处于正向阻断状态(器件处于可控时间)，使得门极变得可控。
This allows the gate to regain control in order to turn the device on at some controllable time after it has again entered the forward blocking state.
端头的p层形成阳极，端头的n层是阴极，而与阴极相邻的p层形成门极（即触发极）。
The end player forms the anode, and the end n-layer is the cathode, while the player adjacent to the cathode forms the gate or trigger electrode.
如果栅极电阻更是降低了，门极电流的5毫安将会更早的周期内达到和SCR将提早火。
If the gate resistance is reduced even more, the 5ma of gate current will be reached even sooner during the cycle and the SCR will fire earlier.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
给出了多个GTO元件关断时的电流、电压波形。 并对其门极电流、电压波形进行了分析和比较。
The paper gives the current and voltage waveforms of multi GTO devices at turn-off, analyzes and compares the waveforms of gate current and voltage.
通过设置死区时间实现开关功率器件的零电压开通与关断，利用该变换器研制出GTO门极驱动用电源。
The turn-on and turn-off of power devices under zero voltage are realized with addition of dead time. The power supply for GTO gate driver is developed by use of the converter.
介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
文中采用数值迭代法和建立等效电流模型，对P_B层结构参数和门极-阴极几何图形尺寸进行了合理设计。
Reasonable designs of the structure parameters of PB layer and the gate-cathode geometry are obtained by numerical iteration and an equivalent current model.
本发明的门极换流晶闸管易于与印刷电路板组装，且使得门控晶闸管与印刷电 路板组成的器件易于维护。
The gate commutated thyristor is easy to be assembled with the printed circuit board, and ensures that a device consisting of a gating thyristor and the printed circuit board is easy to maintain.
通过对大功率集成门极换向晶闸管(IGCT)高压变流器的结构、控制系统、保护系统的研究，设计出一套7。
Through analyzing the topology, control system and protection system of large power high voltage converter equipped with integrated gate commutated thyristor (IGCT), a set of 7.
目前，集成门极换向晶闸管（IGCT）被广泛地应用于不同的领域，诸如中电压传动（MVD）和扣联锁电力网等。
Today Integrated Gate Commutated Thyristors (IGCT) are widely used for different applications such as medium voltage drives (MVD) and interties.
论文介绍了IGCT器件性能参数、门极驱动电路的基本工作原理，对IGCT、GTO和IGBT的特点进行了对比。
The paper introduces the performance parameters and the fundamental principle of gate drive circuit, and compares the features of IGCT, GTO and IGBT.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接。
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.
同时，采用专用芯片SG3525来产生脉宽调制电路，由IR2110组成的驱动电路来驱动绝缘门极双极晶体管（IGBT）。
Special chips, such as SG3525 and IR2110 are also used to generate PWM and to drive the IGBT.
该IX2120B补充IXYSICD广泛的高压栅极驱动器，低侧栅极驱动器，光隔离门极驱动器及全系列IXYS功率半导体的产品组合。
The IX2120B complements IXYS ICD's extensive portfolio of high voltage gate drivers, low side gate drivers, optically isolated gate drivers and the full range of IXYS power semiconductors.
在日本文化中，教育极受重视；数学被视作整个学校教育过程中一门重要的必修科目；刻苦努力和精益求精的精神也颇受重视。
Education is valued greatly in Japanese culture; maths is recognized as an important compulsory subject throughout schooling; and the emphasis is on hard work coupled with a focus on accuracy.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
随着身体的转动和运行，太极拳的运动有助于我门去想象“极”的运行。
The movements of the arms and legs in T'ai Chi Chuan, along with the turns and posturing of the body, help to picture the flow of chi during meditation.
以80c196单片机为核心，构成双极式直流pwm电梯门机可逆调速系统。
A bipolar DC PWM reversible speed-adjusting system is constituted by 80c196 single chip computer for elevator door machine.
以80c196单片机为核心，构成双极式直流pwm电梯门机可逆调速系统。
A bipolar DC PWM reversible speed-adjusting system is constituted by 80c196 single chip computer for elevator door machine.
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