而真正能降低太阳能发电成本的就是使用新材料——比如使用碲化镉制成的半导体材料。
What may really help to lower the cost of solar are new materials-especially semiconductors made from the compound cadmium telluride.
光伏电池依赖于非晶态或晶态的硅，碲化镉或者硒化、硫化铜铟。
Photovoltaic cells rely on amorphous or crystalline silicon, cadmium telluride, or copper indium selenide and sulfide.
位于纽约尼什·卡纳的通用电气全球研究中心，一名研究人员正在分析碲化镉太阳能电池。
A researcher analyzes a cadmium telluride thin-film solar cell at General Electric's Global research Center in Niskayuna, New York.
纳米晶体是由一种称为碲化镉的半导体材料所组成，这种材料对光线的吸收效果非常强。
The nanocrystals consist of a semiconducting material called cadmium telluride, which is a very strong absorber of light.
由于声控打印机比其他喷洒技术更容易控制，该技术消耗的碲化镉低于50%，而且还省去了一些需要昂贵工具参与的深入处理步骤。
Because acoustic printing provides finer control than other printing methods, the technique USES 50 percent less cadmium telluride and eliminates further processing steps that require expensive tools.
碲化镉是一种比硅更便宜的光伏材料。
The compound is cheaper to use for photovoltaic material than silicon.
用碲化镉制作薄膜太阳能电池比硅更便宜。
It's cheaper to make "thin-film solar cells" with cadmium telluride than with silicon.
碲化锰镉磊晶层的活化能随著锰浓度的增加而逐渐变大。
However, the activation energy of CdMnTe epilayer increases with Mn concentration increasing.
生产碲化镉电池需要给太阳能电池添加一层薄薄的氯化镉，然后在炉中加热。
To make these cadmium telluride cells, a thin layer of cadmium chloride is applied to the solar cell, and then heated up in a furnace.
由于材料性质比较敏感，碲镉汞探测器的制备一直是一项具有挑战性的任务。
Fabrication of mercury cadmium telluride (HgCdTe) devices has always been a challenging task due to sensitive nature of the material.
利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。
Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples.
本文介绍了中科院“九五”基础性研究重大项目“碲镉汞红外焦平面光电子物理的应用基础研究”的进展情况。
This paper reports the progress of the project: fundamental research for application of the physics of optoelectronics on HgCdTe infrared focal plane array.
该系统将经过放大的碲镉汞红外元件输出的图象电压直接迭计算机，保持了较高的温度分辨率；
In this system, the signal from the HgCdTe detector amplifier is directly put into A/D interface of a computer, thus making the system keep a higher resolution.
从数字化谱仪、碲锌镉探测器应用、能谱分析新方法和谱仪系统设计新技术等方面综述了近年来国内外谱仪技术的研究及进展。
Up-to-the-art developments of spectroscopic techniques are reviewed, including digital spectrometer, CdZnTe detector, new spectrum analysis methods and new spectrometer system design techniques.
报道了一种适用于碲镉汞长波光伏探测器的由典型电阻电压（R-V）曲线提取器件基本特征参数的数据处理途径。
An data-processing method was developed to obtain the device parameters from the resistance-voltage(R-V) characteristics measured in long-wavelength HgCdTe photodiode.
最后用椭圆偏振测量的方法分析了碲镉汞的横向和纵向组分均匀性。
Finally, the transverse and longitudinal compositional uniformity of HgCdTe is analyzed by ellipsometric measurement which is a nondestructive, effective and r.
窄禁带半导体碲镉汞红外焦平面列阵研究是当代红外光电子技术的前沿。
The study of the infrared focal plane array based on the narrow gap semiconductors HgCdTe is a hot topic in the field of advanced infrared optoelectronics.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
而在缺陷密度比较大的碲镉汞材料中，砷的分布呈多段指数型分布，表现出更复杂的多机制扩散特性。
While in HgCdTe with high dislocation density, the arsenic distribution is complex, exhibiting multi component exponential distribution.
为了获得稳定高效的碲化镉太阳电池，在镀上金属电极前对碲化镉薄膜进行化学腐蚀是很重要的。
In order to get stable and high efficiency thin-film CdTe solar cells that the CdTe thin films surface chemical etching before deposition of a metallic contact is very important.
它采用DRS冷却碲镉汞探测器技术，并且带有超长低温冷却器。
It USES DRS cooled Mercury Cadmium Telluride detector technology with ultra-long-life cryogenic coolers.
针对长线列碲镉汞红外焦平面探测器封装的特点，文章讨论了分置式微型杜瓦研制的难点。
According to package characteristics of long linear HgCdTe IRFPA detector, difficulties of the metal split micro dewar manufacture are discussed in the paper.
多层化合物合成炉装置用于碲化镉、碲化锌和碲化铅的合成。
The multilayer compound synthetic furnace device is applied to the synthesis of cadmium telluride, zinc telluride and lead telluride.
然而碲化镉很便宜，每瓦特发电量只要74美分，而最便宜的硅太阳能电池都超过1美元。
Yet they are cheap, costing around 74 cents per watt of generating capacity, compared to well over a dollar for the cheapest silicon panel.
结果表明，利用迁移率谱技术可以很好地区分这两种碲镉汞材料。
The result shows that the MSA is a technique suitable for distinguishing above both HgCdTe materials.
二氧化钛、氧化锌、硫化镉、碲化镉等半导体材料对紫外光具有很好地吸收性能。
Semiconductor materials, such as titania, zinc oxide, cadmium sulfide and cadmium telluride have excellent UV absorption property to generate photoelectrons, which form photocurre…
二氧化钛、氧化锌、硫化镉、碲化镉等半导体材料对紫外光具有很好地吸收性能。
Semiconductor materials, such as titania, zinc oxide, cadmium sulfide and cadmium telluride have excellent UV absorption property to generate photoelectrons, which form photocurre…
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