通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
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