简介一种以锗雪崩光电二极管(APD)为光电转换器件的探测器电路的工作原理，详细介绍电路各组成部分的设计要求和设计要点。
The operation principle of a detecting circuit in which avalanche photo-diode (APD) is used as photoelectric conversion device and the every part of the circuit are presented.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
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