铁电存储器的存储速度比闪存的存储速度快200多倍，是一种极有可能成为下一代半导体存储器的非易失性存储器。
More than 200 times faster to access than flash memory, FeRAM is a type of nonvolatile memory that has many possibilities for use as next-generation semiconductor memory.
本发明属于半导体器件技术领域，具体为一种高密度电荷存储的新型铁电电容器及其制作方法。
The invention belongs to the technical field of semiconductor devices, in particular to a novel ferroelectric condenser for storing high density charge and method for preparation.
本发明属于半导体器件技术领域，具体为一种高密度电荷存储的新型铁电电容器及其制作方法。
The invention belongs to the technical field of semiconductor devices, in particular to a novel ferroelectric condenser for storing high density charge and method for preparation.
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