首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。
Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.
首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。
Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.
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