研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla says it should be possible to grow the wires on semiconductors or insulators as well and prove that electrons superconduct along the wires.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla said (metal wire) is probably produced in the semiconductor or insulator and thus further evidence of the electronic conductivity along the wires without resistance.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla said (metal wire) is probably produced in the semiconductor or insulator, and thus further evidence of the electronic conductivity along the wires without resistance.
半导体器件。要求和检验。陶瓷绝缘的金属外壳。
Semiconductor devices; metal cases with ceramic insulation, requirements and tests.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
本发明提供一半导体元件及制造镶嵌结构中的金属绝缘金属电容的方法。
The invention provides a semiconductor component and a method for manufacturing a metal-insulator-metal capacitor in a Mosaic structure.
常用金属氧化物大多为半导体或绝缘体，对激光有良好的吸收性能。
Most metal oxides widely used are semiconductors or insulators, and have good absorbing properties to laser.
该半导体组件还包括涂覆金属(36)，该涂覆金属位于绝缘体的至少一部分之上并互相连接背面接触垫。
The semiconductor assembly further includes metallization (36) situated over at least a portion of the insulation and interconnecting the backside contact pads.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
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