本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
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