功函数金属层可形成在界面层上。
A work function metal layer may be formed on the interface layer.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
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