而宏观量子隧穿现象同时又是一个亚稳态的衰减过程。
Meanwhile the phenomenon of the macroscopic quantum tunneling is also a decay process of metastable state.
量子隧穿发生在许多的物理过程中，比如说放射性衰变和太阳上发生的核聚变。
Quantum tunneling is involved in many physical processes, such as radioactive decay and the nuclear fusion that takes place in the Sun.
量子隧穿效应是指粒子能够穿过正常来说它的能量不足以通过的障碍。
Quantum tunneling is an effect where a particle can pass through a barrier it would not normally have the energy to overcome.
当科学家在探针上加一定电压时候，电子能够在它和样品表面之间跳跃，这个过程叫做量子隧穿。
When scientists apply a voltage to the finger, electrons can hop between it and the surface through a process called quantum tunneling.
量子隧穿还是扫描隧道电子显微镜的一大特色。这是第一种能够拍摄和操作原子的显微镜。
Quantum tunneling is also a key feature of the scanning tunneling microscope, the first machine to enable the imaging and manipulation of individual atoms.
例如，葡萄糖氧化酶是葡萄糖变成过氧化氢的催化剂，在催化过程中包括一个完整氧原子的量子隧穿。
For example, the enzyme glucose oxidase, which catalyses the reaction of glucose into hydrogen peroxide, involves the quantum tunneling of an entire oxygen atom.
文章作者解释了如何通过量子隧穿实现宏观量子相干(即薛定谔猫态的相干叠加)和量子态位相干涉。
We explain how to realize macroscopic quantum coherence, namely the superposition of Schrdinger cat states and quantum phase interference by means of quantum tunneling.
自从对于锥形分子，其分子内的重新组合的量子隧穿效应1927年被证实以来，人们在研究隧穿效应上做了大量的工作。
Since the quantum tunneling for intramolecular rearrangements in pyramidal molecules was testified in 1927 a lot of work has been done to study the tunneling.
最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
隧穿磁强计是一种利用量子力学中隧道效应原理研制的MEMS磁强计。
Tunneling magnetometer is a kind of MEMS magnetometer based on tunnel effect in quantum mechanics.
系统处于这两个宏观量子态的相干叠加态，它们之间由于相干隧穿导致能级的劈裂。
The system is in the state of the superposition of the two macroscopic quantum states. Thecoherent tunnelling between them leads to the energy splitting.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
造成这种不对应的原因是量子上所特有的隧穿效应。
本论文系统研究了耦合量子点系统在外场作用下的量子驱动隧穿动力学。
This thesis is devoted to study the quantum dynamics of coupled quantum dot system in the presence of external fields.
进一步指出，这些峰来自于电子共振隧穿量子结构中的量子束缚态。
Furthermore, these peaks are due to the resonant tunneling via bound states in the quantum structure.
研究了零电场和正弦电场作用下的磁量子结构中自旋电子的隧穿输运特性。
Properties of tunneling transmission in magnetic quantum structures have been analysed based on Schr dinger equation both in zero electric field and in sinusoidal one.
研究了电路量子态的演化，电路中电荷及电流的量子压缩效应以及介观电容器中隧穿电流的量子崩塌与复苏现象。
Subsequently, we study the evolution of the quantum state, the quantum squeezing effects of the charge and the current, and the quantum CR phenomenon of the tunneling current in the capacitance.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
在多量子阱结构中可看到明显的共振隧穿效应。
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
应用非平衡格林函数方法，研究了带有微波调制的侧向耦合量子点的量子线中的光辅助隧穿。
By using Non-equilibrium Green Function(NGF) method, photon-assisted tunneling(PAT) through a quantum wire with a microwave modulated side-coupled quantum dot is studied.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
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