本发明是一种光子晶体量子阱结构。
在多量子阱结构中可看到明显的共振隧穿效应。
本文报道了以混合应变量子阱结构为有源区的激光器。
The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.
重点设计了量子阱结构来降低阈值电流，提高输出光功率。
Modify quantum well structure can decrease threshold current and increase power.
第五章，介绍了一种含有负折射率材料的光子晶体量子阱结构。
In the fifth chapter, we introduce a photonic quantum-well structure containing negative-index materials.
多重量子阱结构和光致发光的研究，对材料结构分析有着重要的意义。
It is of much significance that researches on the multi-quantized potential trough structure of light-luminescence have done to the analysis of material construction.
多重量子阱结构和光致发光的研究，对材料结构分析有着重要的意义。
It is of much significance to the analysis of material construction that researches on the multi-quantized potential trough structure and the light-Lumiresence are done.
本文讨论了超晶格半导体材料(多层量子阱结构)在光开关和光计算中应用的优越性。
This paper discusses the advantages of superlattice semiconductor materials (Multiple Quantum Well Structure) in optical switching and optical computing.
我们数值计算了量子点量子阱结构中的自由极化子和束缚极化子的基态能量以及基态结合能。
The ground state energy and the binding energy of a bound polaron in Quantum-dot Quantum well structure are calculated, and the free polaron is also studied.
本文从理论上对混合应变量子阱结构(既有张应变量子阱又有压应变量子阱)的光学限制因子进行了讨论。
The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper.
VCSEL自从采用了量子阱结构后性能大大改善，但是量子阱阱数的多少才合理一直是一个重要的课题。
The functions of VCSEL have made great process because of the application of quantum well structure. But which is the optimal quantum well numbers is a important subject.
对单外延层结构材料、量子阱结构材料、含超晶格结构材料等，分别应用动力学理论和运动学理论作了对比分析。
We have analyzed the single layer material, quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way.
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质（如吸收、反射、光致发光等）。
Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantum well structures.
最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
以准对称耦合量子阱为蓝本，利用此优化原则，对其结构进行优化。
Using the optimization principles, the structure of quasi-symmetric coupled quantum-well is optimized.
通过计算应变多量子阱中的净应力和应变弛豫，讨论了激光器结构中应变多量子阱的稳定性。
In this paper, the stability of strained MQWs in laser structure is discussed in terms of the calculation of net stress and strain relaxation.
近十几年来，人们预期低维量子结构，如：量子阱、量子线、量子点，在光学器件上有潜在的应用价值。
In recent ten years, the low-dimensional quantum structures, such as quantum Wells quantum wires and quantum dots, had potential technological application in the optical devices.
在量子阱能带结构计算当中，带边不连续能量直接影响计算的结果，如果带边不连续能量计算不精确，就不能得到正确的能级位置。
The band offset directly affect the calculation results of the quantum well band structure. if the calculation of band offset does not accurate, we should not get right band edges.
报道了一种具有垂直集成无源波导的耦合波导结构量子阱激光器的理论设计，它可以使垂直结平面方向的远场光束发散角得到有效的降低。
In this paper, the theoretical design for the quantum well lasers with vertically integrated passive waveguides, which decreases the vertical beam divergence effectively, are reported.
更优选地，该器件结构包含存储单元，该存储单元具有三个量子阱，该三个量子阱被设置和构造成限定两种不同的存储状态。
More preferably, the device structure contains a memory cell having three quantum Wells that can be arranged and constructed to define two different memory states.
小阱宽的量子阱虽然光学限制因子和载流子注入比例都较小，但由于其价带耦合小于宽量子阱，从而具有高的模式增益，说明量子阱的能带结构对其光学特性有决定性的作用。
Although small QW has smaller optical confinement factor and smaller ratio of carriers injected into QW, it can provide higher mode gain because of its smaller mixing between valence bands.
电子波干涉法是一种新的量子阱探测器能带结构计算方法，该方法是基于电子波在量子阱界面的反射和干涉效应提出的。
This method is based on the reflectance and interference effects of electron wave at interfaces between the wells and the barriers.
这种器件结构优选地包含耦合量子阱器件，该耦合量子阱器件具有两个或更多个量子阱，该量子阱可以在简并能级通过阱间隧道效应而耦合在一起。
Such a device structure preferably contains a coupled quantum well devices having two or more quantum Wells that can be coupled together by inter well tunneling effect at degenerate energy levels.
由于电子结构的差异而形成的ABA三嵌段链的量子阱能带构型图 Fig。
Schematic illustration of quantum-well formation in ABA tri-block chain due to electronic structure differences.
提供了一种用于发光二极管的多量子阱(MQW)结构以及用于制造用于发光二极管的MQW结构的方法。
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided.
现有结果表明，光调制反射光谱方法已经成为研究量子阱中子能级间跃迁过程和检测超晶格微结构等的简便而有效的手段。
It has been demonstrated that the photo-modulation spectroscopy has become one of the most powerful and simplest tools for the investigation of the inter-subband t…
现有结果表明，光调制反射光谱方法已经成为研究量子阱中子能级间跃迁过程和检测超晶格微结构等的简便而有效的手段。
It has been demonstrated that the photo-modulation spectroscopy has become one of the most powerful and simplest tools for the investigation of the inter-subband t…
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