文中对小信号调制下单量子阱激光器的啁啾特性进行了研究和分析。
In this paper, the chirping characteristics of quantum well laser diodes under small signal modulation are studied.
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
用该系统优化设计了1.5微米应变量子阱激光器与调制器，取得很好结果。
The 1.55 mm strained QW lasers and modulators are optimized and designed by using the design system, and the good results are presented.
文中运用三层速率模型，对小信号调制下单量子阱激光器的频率响应进行模拟分析。
This paper presents a simulative method to solve the frequency response of single quantum well laser diode under small signal modulation.
给出一个新的量子阱激光器等效电路模型，由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。
A simple equivalent circuit model of quantum well laser (QW LD) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE.
报道了一种具有垂直集成无源波导的耦合波导结构量子阱激光器的理论设计，它可以使垂直结平面方向的远场光束发散角得到有效的降低。
In this paper, the theoretical design for the quantum well lasers with vertically integrated passive waveguides, which decreases the vertical beam divergence effectively, are reported.
本文报道了以混合应变量子阱结构为有源区的激光器。
The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.
通过计算应变多量子阱中的净应力和应变弛豫，讨论了激光器结构中应变多量子阱的稳定性。
In this paper, the stability of strained MQWs in laser structure is discussed in terms of the calculation of net stress and strain relaxation.
结果表明，当激光器包含多个量子阱时，量子阱内部的载流子密度的不均匀性会损害激光器的性能。
It is indicated that the laser structures with many quantum Wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
对多量子阱被动锁模半导体激光器的噪声理论进行了系统的分析，并给出了半导体激光器腔内相位随载流子浓度变化的关系。
In this paper, the noise theory of monolithic multi-quantum-well passively mode-locked laser diodes (MLLDs) is discussed, and the phase variation curve with carrier population of MLLDs is found.
利用MOCVD研制了无铝双量子阱列阵半导体激光器。
The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically;
利用金属镜面微腔激光器中真空场和量子阱中电子态函数，对比了TE模和TM模的自发发射谱。
The transmission spectra of TM mode in the bend waveguide with triangular lattice of dielectric rods and TE mode in the bend waveguide have been calculated.
利用金属镜面微腔激光器中真空场和量子阱中电子态函数，对比了TE模和TM模的自发发射谱。
The transmission spectra of TM mode in the bend waveguide with triangular lattice of dielectric rods and TE mode in the bend waveguide have been calculated.
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