实验结果表明：量子点的横向耦合控制了量子点器件在小偏压下的电输运特性。
Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.
硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。
There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with mature Si integrated circuit.
量子点光学微腔器件在低阈值激光器和单光子光源等量子信息处理技术领域有重要的应用前景。
Quantum dot optic microcavity device had potential application in field of quantum information technology using as the low threshold laser and single photon light source etc.
纳米半导体量子点以其所具有的新颖光电性质与输运特性，正在各类量子功能器件中获得成功应用。
Nanometer semiconductor quantum dots have potential application in the novel quantum functional devices because of their unique photoelectric and transport properties.
近十几年来，人们预期低维量子结构，如：量子阱、量子线、量子点，在光学器件上有潜在的应用价值。
In recent ten years, the low-dimensional quantum structures, such as quantum Wells quantum wires and quantum dots, had potential technological application in the optical devices.
由于半导体量子点具有零维电子特性，它不仅成为基本物理研究的重要对象，也成为研制新一代量子器件的基础。
Quantum dots (QDs), with zero-dimensional electronic properties, have stimulated great interest due to their important roles in fundamental physical research and for developing novel devices.
由于半导体量子点具有零维电子特性，它不仅成为基本物理研究的重要对象，也成为研制新一代量子器件的基础。
Quantum dots (QDs), with zero-dimensional electronic properties, have stimulated great interest due to their important roles in fundamental physical research and for developing novel devices.
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