最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
进一步指出，这些峰来自于电子共振隧穿量子结构中的量子束缚态。
Furthermore, these peaks are due to the resonant tunneling via bound states in the quantum structure.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
在多量子阱结构中可看到明显的共振隧穿效应。
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
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