针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
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