目前主要采用化学气相沉积法、离子束溅射法、激光等离子体沉积和激光烧蚀、离子镀、离子注入法等制备方法。
Its structure and character were reviewed, and the synthetic methods, including CVD, ion beam sputtering, laser ablation, ion plating and ion irradiation et al., were completely introduced.
首先采用溶胶-凝胶法制备镍催化剂，在此基础上用化学气相沉积法高产率地制备了碳纳米管。
The catalyst was first produced by sol-gel method and the carbon nanotubes were high yield synthesized by the catalytic chemical vapor decomposition method.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
从简化步骤、降低成本的角度出发，采用快速热化学气相沉积（RTCVD）法在低纯颗粒带硅（SSP）衬底上制备出了多晶硅薄膜太阳电池。
Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.
采用热丝化学气相沉积法在覆盖c _(60)膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。
In this paper, the diamond films were grown on the C_ (60) -coated silicon substrate by using hot-filament chemical vapor deposition technique. The diamond nucleation and growth were studied.
采用化学气相沉积(cvd)法，制备出大量的高性能碳微球。
In this paper, a great deal of high property carbon microspheres were prepared by CVD method.
金属有机化学气相沉积法(MOCVD)是一种先进的涂层制备方法，采用此方法制备的涂层具有质量高、完整性好、厚度易于控制等优点。
(MOCVD) is an advanced preparative technique. Coatings prepared by the method have many strongpoints such as high quality, good completeness and good controllability.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用切环测量法及X射线应力分析方法对化学气相沉积制备的开裂钨管进行测量与分析。
Cracked tungsten tubes prepared by chemical vapor deposition were investigated by ring machine cutting method and X? Ray stress analysis system.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
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