本发明提供了电源电平升高的可编程逻辑器件存储器单元。
Programmable logic device memory elements with elevated power supply levels are provided.
在数据加载操作过程中，可以按与可编程核心逻辑电源电压相等的电源电压对存储器单元供电。
During data loading operations, the memory elements may be powered with a power supply voltage equal to the programmable core logic power supply voltage.
在正常操作过程中，可以按比可编程核心逻辑电源电压高的电源电压对存储器单元供电。
During normal operation the memory elements may be powered with a power supply voltage that is larger than the programmable core logic power supply voltage.
在正常操作过程中，可以按比可编程核心逻辑电源电压高的电源电压对存储器单元供电。
During normal operation the memory elements may be powered with a power supply voltage that is larger than the programmable core logic power supply voltage.
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