其中退火温度是决定性的因素。
退火温度越高，硬度下降幅度越大。
The hardness of the alloy decreased as the annealing temperature increased.
退火时间不变、退火温度过低或过高；
The annealing temperature is passed through lowly either is overtopped.
而最佳中间退火温度受合金成分的影响。
The optimum middle annealing temperature depends on the chemical composition of the alloys.
合金的最佳中间退火温度随碳含量的增加而升高。
The optimal middle annealing temperature increases with the increase of the carbon content.
粘度极小值取对数之后与预退火温度成线性关系。
After logarithm fetch on minimum of viscosity, which get linear relation with pre-annealed temperature.
随退火温度升高，合金丝电阻率下降，热电势升高。
As the annealing temperature rises, the resistivity of alloyed wire reduced and thermal potential raised.
随退火温度的升高和保温时间的增长，新衍射峰增强；
The higher the annealed temperature and the longer the annealed time, the stronger the new diffraction peaks.
纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应。
As the annealing temperature increases the red shift of PL peak from nc si shows the quantum size effect.
实验表明，发光峰值能量随退火温度的升高而移向低能。
The experimental results shows that PL peak energy positions shift towards the lower energy with annealing temperature increasing.
达到退火温度后，钢应当保持在此温度等到全部均匀受热。
When the annealing temperature has been reached, the steel should be held there until it is uniform throughout.
结果表明：纳米氧化铝的热扩散率随退火温度的升高而减小。
The results show that the thermal diffusivity decrease with annealing temperature elevating.
结果表明，薄膜的晶体结构与胶棉液的含量及退火温度有关。
The results indicated that the structures of MgO films were closely related to the amount of collodion and the annealing temperature.
因此，降低退火温度，缩短退火时间是一个急待解决的问题。
So to shorten annealing temperature and time is a vital issue.
研究了不同退火温度对热等静压纯钒组织和力学性能的影响。
Effects of annealing temperature on the microstructure and properties of pure vanadium manufactured by hot isostatic pressing were studied.
此外，随退火温度升高，铁电薄膜的自发极化强度先增强后减弱。
The spontaneous polarization of ferroelectric films was strengthened and then weakened with the increasing of annealing temperature.
目的探讨聚合酶链式反应变性及退火温度与产物假阴性之间的关系。
Objective to explore the relationship of temperatures for denaturalization and annealing to the false negative PCR result.
同时，随着退火温度升高，光致发光光谱的峰值能量位置移向低能。
At the same time, the peak energy positions of PL spectra shift toward lower energies with the increase of the annealing temperature.
从反射率随时间的变化曲线，计算出不同退火温度下的固相外延速率。
From the time-dependence of reflectivity at different temperature the solid phase epitaxial (SPE) growth rate was calculated.
研究了铁素体区热轧if钢经冷轧后，不同退火温度对丝织构的影响。
The effect of annealing temperature on fibrous texture of cold rolled IF steel sheet rolled from strip hot rolled in ferrite region was investigated.
随着退火温度的上升，薄膜表面质量下降，分形维和电阻率也随之降低。
The results indicate that the surface quality, FD and resistivity of the film increase with the sputtering time, but decrease with the Annealing temperature.
薄膜电阻率随退火温度的变化行为与薄膜微观结构的变化以及界面扩散有关。
The annealing behavior of the resistivity is correlated with the microstructure and interfacial diffusion of the films.
随覆层材料体积比的增加、扩散退火温度的升高及扩散退火时间的延长而升高。
Conductivity was increased with the increase of volume ratio, annealing temperature and annealing time.
研究了制备薄膜的结构、成分、电学和光学特性以及退火温度对薄膜性能的影响。
The structure, electrical and optical properties of the deposited films have been studied with various annealing temperatures.
文中着重介绍了注入离子能量、剂量、退火温度及时间对电路元件电学性能的影响。
Tbe present paper is devoted to describe the effect of the implanted energy, dose, and annealing temperature and time on electrical characteristics of circuit components.
前言： 目的：探讨和尝试一种较为迅速确定最佳退火温度的方法来扩增目的基因。
Objective:To explore a method for quicker identification of the optimal annealing temperature in PCR.
研究结果表明，BST薄膜的晶化行为强烈依赖于退火温度、退火时间和加热速度。
The results show that crystallization behaviors of the BST thin film are strongly dependent on the annealing temperature, the annealing time and the heating rare.
结果表明：大大降低退火温度，缩短退火时间，提高力学性能，综合节能效果显著。
The results show that the annealing temperature was reduced, the annealing time was reduced and the mechanical properties were enhanced, which has remarkable energy conservation effect.
扫描电子显微镜的结果表明，高的退火温度或高的激光能量均会导致迷津结构的形成。
The scanning images of electron microscopy show that high annealing temperature or high laser energy can induce the nanocrystalline Si film with mazes.
此外，随着退火温度的提高，氢渗透时间和氢陷阱系数也增大，而氢的扩散系数则降低。
In addition, both hydrogen permeation time and trapping coefficient of hydrogen increase but the hydrogen diffusivity decreases in the steel with the elevation of annealing temperature.
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