离子门是离子迁移谱仪的一个重要部件，主要作用是用来控制离子以脉冲的方式有效地进入迁移管。
Ion gate is one of the important parts in an ion mobility spectrometer. The main function of the ion gate is to control the ions to fly into the drift tube in pulse mode.
离子迁移管是离子迁移谱仪的核心部分，它用来产生均匀的电场，以使不同迁移率的离子进行分离。
The drift tube is the key part of the ion mobility spectrometry. The drift tube is used to produce even electric field, so that different ions can be separated because of different ions mobility.
对离子迁移谱系统进行了优化，得到了最佳的迁移管长度和管内电场强度；同时研究了迁移信号和样品浓度的关系。
The length of the mobility tube and the electric field intensity have been adjusted to optimum, and the relationship between the drift signal and the sample concentration has been studied.
如果您迁移到集成版，您就获得了对J2C受管模式的完全支持，这本身比起使用CCF连接器或在j2c非受管模式下运行也大有好处。
If you migrate to Integration Edition, you gain full support of J2C managed mode, which is in itself a significant benefit over using CCF connectors or running in J2C non-managed mode.
迁移后的类可以运行于受管或非受管模式下。
The migrated classes can run in managed or non-managed mode.
富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。
Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
低浓度VBL能有效抑制ECV- 304细胞的迁移及管样结构生成。
Low dose VBL could inhibit migration and tubular morphogenesis of ECV-304 cells in vitro.
目的观察趋化因子sdf- 1促内皮祖细胞增殖、迁移和管型形成的作用。
Objective to explore the effect of chemokine SDF-1 on the proliferation, migration and in vitro of human endothelial progenitor cells (EPCs).
结论肺内淋巴液的生成可能以小泡转运系统为主，肺巨噬细胞及白细胞迁移入淋巴管的通道可能是位于细胞连接处的一侵蚀性通道。
Conclusion Vesicles transportation might be the main pathway of lymph formation in lung, the lymphatic passage through which pulmonary macrophage and leukocyte pass might be a erosive passage.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
目的研究血管内皮生长因子C（VEGF C）对于淋巴管内皮细胞增殖和迁移的作用，探讨VEGF C促进淋巴管新生的机制。
Objective To investigate effects of VEGF C on proliferation and migration of lymphatic endothelial cells and explore mechanism of lymphangiogenesis induced by VEGF C.
脊髓损伤可激活自体室管膜细胞的原位增殖及迁移，后者具有一定的可塑性，参与伤后脊髓的结构修复。
The spinal cord injury stimulates the proliferation of ependymal cells in sim, the ependymal cells participates in the rehabilitation of spinal cord injury and represent neural plasticity.
本发明的薄膜晶体管具有光敏退化性小、迁移率高，响应速度快、柔性可弯曲、性能稳定性好的优点。
The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
此薄膜晶体管及薄膜晶体管的制造方法可增加开启状态电流与通道区的电子迁移率。
The method can increase electron mobility between the startup state current and the channel area.
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
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