由热结晶形成的结构陷阱俘获载流子能力在结晶度为20%时达到极值。

Crystallization by annealing made the depth of trap level deep too, but the ability to trap charge carriers showed a maximum at crystallinity of 20%.

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由热结晶形成的结构陷阱俘获载流子能力在结晶度为20%时达到极值。

Crystallization by annealing made the depth of trap level deep too, but the ability to trap charge carriers showed a maximum at crystallinity of 20%.

youdao