同时，本发明的结构能增进在半导体元件中的电荷载流子迁移率。
At the same time, the structure of this invention can improve the electric load current carrier migration rate in the semiconductor component.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
摘要：通过器件模拟的方法研究了载流子迁移率对有机太阳能电池性能的影响。
Abstract: the influence of the carrier mobility on the performances of organic solar cells was studied using the simulation method.
研究表明：这些小分子具有较好的溶解性，较宽的吸收光谱以及较高的载流子迁移率。
Research results showed that these small molecules possess good solubility, broad absorption and relatively high hole mobility.
在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。
We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
衬底诱生应力、工艺诱生应力和采用不同的衬底晶向等三类方法都可以显著提高载流子的迁移率。
Substrate induced stress, process induced stress and use of different substrate orientations are major techniques that can significantly enhance carrier mobility.
按比例缩小使集成电路的性能得以不断提高，但这并不能够从物理本质上增强载流子的迁移率。
Although providing a continual performance improvement of integrated circuits, geometric scaling of si devices can not enhance carrier mobility physically.
在室温条件下测量电流和磁场的大小对载流子浓度和迁移率测量结果的影响。
Under room temperature conditions, the influence of measuring current and magnetic field on carrier concentration and mobility results are studied too.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
本文建立了非均匀次掺杂层载流子平均迁移率与平均电导的普遍关系。
The general relationship between average mobility of carries and average conductivity in a doped layer with an arbitrary impurity distribution has been established.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
的钝化效应减少了载流子的散射中心，降低了晶界势垒，有效地提高了载流子的迁移率。
F-passivation decreased the scattering centers of the carriers and the height of the potential barriers at the grain boundaries, thus, increased the Hall mobility of the carriers.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
从统计分布规律出发，讨论了简并和非简并情况下载流子等的异同，提出简并条件下需采用费米分布来修正迁移率等。
First, in the paper the migration rate is amended on the basis of the statistical distribution and the better transient response models are put forward.
从统计分布规律出发，讨论了简并和非简并情况下载流子等的异同，提出简并条件下需采用费米分布来修正迁移率等。
First, in the paper the migration rate is amended on the basis of the statistical distribution and the better transient response models are put forward.
应用推荐