但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
探讨了光生载流子在漂移、扩散和光生伏打效应三种机制下输运迁移以及空间电荷场的形成过程。
The migration of the photocarrier and the formative process of space field induced by photocarrier s drift, diffusion and photovoltaic effect were studied.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
文章研究了掺铁铌酸锂晶体在激光辐射下的电荷输运迁移，探讨了光折变过程中光生载流子的漂移、扩散、光致电压以及空间电荷场的动态过程。
The storage dynamics in doped lithium niobate are studied. It gives that the equations of the migration of charges is due to diffusion or drift and photovoltaic effect.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
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