在这个区内的载流子浓度被消耗殆尽。
这个过程与载流子浓度和晶格温度有密切关系。
The processes are closely related to carrier concentration and lattice temperature.
得到了电子亚带能量和波函数随自由载流子浓度的变化规律。
The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained.
用自动电化学C—V法测量了外延层的载流子浓度剖面分布。
The carrier con- centration profiles of epilayers are measured by automatic electrochemical C— V method for the first time.
测试晶体的吸收光谱、指数增益系数、衍射效率和有效载流子浓度。
The absorption spectra, exponential gain coefficient, diffraction efficiency and effect carrier concentration of the crystal were measured.
经过激光处理后样品表面一薄层载流子浓度超过了杂质的固溶度极限。
The carrier concentration of surface after CO2 laser irradiation can exceed the solid solubility limit.
在此基础上，研究了每一段等效反射率谱曲线随载流子浓度变化的情况；
On the basis of this, the effective reflective index with the variation of the carrier density is discussed.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
为了改善反向恢复特性，必须降低通态过程中靠近阳极的过剩载流子浓度。
In order to improve the reverse recovery characteristic the excess carrier concentration close to the anode during the on-state has to be reduced.
在室温条件下测量电流和磁场的大小对载流子浓度和迁移率测量结果的影响。
Under room temperature conditions, the influence of measuring current and magnetic field on carrier concentration and mobility results are studied too.
然后基于半导体的速率方程理论，建立了载流子浓度随时间变化的数学模型。
Secondly, mathematical model of time-resolved carrier density has been established on the base of semiconductor rate equation theory.
与常温情况相比，低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。
It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low...
移动的载流子迁移到冷端后会形成载流子浓度差，从而在材料两端产生热电电压。
Mobile charged carriers migrating to the cold side to create a carrier concentration gradient thus giving rise to a thermoelectric voltage.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
该表达式可以用来预测激光器激射工作时，两段载流子浓度和激射波长之间的相互关系。
Using this expression, the interrelation of the carrier density in each segment and the emission wavelength can be predicted while the laser is lasing.
电化学C-V（ECV）法是当前测量化合物半导体载流子浓度分布的非常重要的方法。
Electrochemical capacitance-voltage profiler(ECV)is the most convenient method to characterize the carrier concentration of compound semiconductor.
本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。
A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
分析认为该电导出现极值的现象是因为高温晶格氧析出导致样品空穴载流子浓度降低所致。
This change is attributed to the hole carrier concentration decreasing with lattice oxygen releasing supported by iodic titration result.
本文从一简单模型出发，计算了丝状发光器件的电流密度、电压、载流子浓度和增益分布。
The profiles of junction current and voltage and carrier-concentration in an injection laser with filament were calculated on the basis of a simple model.
比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
本文叙述了通过自动电化学c - V剖面图技术，在宽的掺杂和深度范围内，载流子浓度纵向分布的测量。
The measurement of carrier concentration profiles over a wide range of doping le-vels and depths by using automatic electrochemical C-V profiling technique is described.
用溶胶–凝胶法制备的钴掺杂氧化锌薄膜在不同气氛下退火后均显示室温铁磁性，并且具有不同的载流子浓度。
The room temperature ferromagnetism in Co-doped ZnO films with different carrier concentration fabricated by the sol–gel method at different annealing atmospheres was investigated.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
对多量子阱被动锁模半导体激光器的噪声理论进行了系统的分析，并给出了半导体激光器腔内相位随载流子浓度变化的关系。
In this paper, the noise theory of monolithic multi-quantum-well passively mode-locked laser diodes (MLLDs) is discussed, and the phase variation curve with carrier population of MLLDs is found.
随着载流子浓度的增加，可以看到各分立量子点的分立能级过渡到了各量子点相互统一的准连续态，逐渐消除了量子点的尺寸分布效应。
When the excited carrier intensity goes up, isolated QDs are correlated as a quasi-unite by the WL, screening the difference of QD sizes more or less.
利用耦合波方程，对两段式DF B激光器进行理论分析，得出了激光器激射工作时两段载流子浓度和激射波长之间所满足的隐含表达式。
Based on coupling-wave equation, two-segment DFB lasers have been analyzed, and implicit expression of their carrier density and emission wavelength has been obtained.
结果表明，和氢溴酸对PANI的质子酸掺杂不同，溴掺杂过程中产生的溴负离子增加了PANI的载流子浓度，形成了电子转移复合物，提高了聚苯胺的电导率。
It is showed that bromine anions and charge transfer complex formed in the doping process enhanced the charge carrier concentration then promote the conductivity of PANI.
从聚合物光电池中光电流和暗电流的产生机制出发，对该现象进行了解释，认为外加磁场可以有效改变单重态极化子对和三重态极化子对之间的相对比例，进而使自由载流子浓度增加。
The results show that the magnetic field can effectively change the relative ratio between the singlet and the triplet polaron pairs, resulting in an increase in the density of the free carriers.
从聚合物光电池中光电流和暗电流的产生机制出发，对该现象进行了解释，认为外加磁场可以有效改变单重态极化子对和三重态极化子对之间的相对比例，进而使自由载流子浓度增加。
The results show that the magnetic field can effectively change the relative ratio between the singlet and the triplet polaron pairs, resulting in an increase in the density of the free carriers.
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