文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。
Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained.
通过对载流子扩散机理的研究，由数学公式的推导，得到陷阱电荷分布随电场变化的函数关系。
Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states.
载流子的热弛豫过程与扩散过程在整个衰减过程中所占的比例，取决于激发光子的能量。
The proportion between the thermalization process and diffusion process possess in all the decay process is determined by photon energy of excitation.
以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。
Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles.
探讨了光生载流子在漂移、扩散和光生伏打效应三种机制下输运迁移以及空间电荷场的形成过程。
The migration of the photocarrier and the formative process of space field induced by photocarrier s drift, diffusion and photovoltaic effect were studied.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
文章研究了掺铁铌酸锂晶体在激光辐射下的电荷输运迁移，探讨了光折变过程中光生载流子的漂移、扩散、光致电压以及空间电荷场的动态过程。
The storage dynamics in doped lithium niobate are studied. It gives that the equations of the migration of charges is due to diffusion or drift and photovoltaic effect.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
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