微分增益系数随薄层载流子密度的增加而降低。
The differential gain coefficient decreases with increased sheet carrier density.
在任何载流子密度条件下，辐射强度与准费米能级差的关系保持不变。
At all carrier densities, the relation between emission intensity and difference of the quasi Fermi energies is maintained.
进一步分析认为，这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。
Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.
结果表明，当激光器包含多个量子阱时，量子阱内部的载流子密度的不均匀性会损害激光器的性能。
It is indicated that the laser structures with many quantum Wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.
在损耗调制的情况下，系统变化前后的阈值载流子密度不同，被忽略的二阶小量可能会达到与一阶小量可比拟的程度。
For a loss modulation where the threshold carrier density may change, the neglected term may become comparable to the retained first order small quantity.
以陷阱电荷限制传导理论为基础，用数值方法研究了单层有机电致发光器件发光层中电势、电场和载流子密度的空间分布。
The electrical potential, field and carrier density in emission layer of single layer organic light-emitting devices are numerically studied based on the trapped charge limited conduction theory.
具体地说，在损耗调制的情况下，系统变化前后的阈值载流子密度不同，此时小信号近似分析可能会失效，因而使用时需慎重。
More specifically, if the threshold carrier densities are different before and after the system changes, the small signal analysis should be used very carefully.
分析有源区内载流子和VCL光子密度的变化，揭示了增益钳制的物理机理。
Analyzing the carrier density and photon density of VCL in active region, the physical mechanism of gain clamping was revealed.
系统分析了小尺寸半导体器件中的载流子非本地输运模型，重点研究了非均匀能带结构和异质结效应对输运电流密度的影响。
This paper analyzes the carrier non local transport model of small size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis.
电势分布沿信号电荷密度流方向衰减且电荷载流子倍增寄存器工作频率越高，电势衰减越快。
It is attenuated along the direction of charge density. The higher the CCM frequency is, the sooner the potential attenuation is.
本文简明地描述了由载流子带内弛豫加宽的半经典的密度矩阵理论。
The semiclassical density-matrix theory with carrier intraband relaxation broading is described.
本文从一简单模型出发，计算了丝状发光器件的电流密度、电压、载流子浓度和增益分布。
The profiles of junction current and voltage and carrier-concentration in an injection laser with filament were calculated on the basis of a simple model.
本文从一简单模型出发，计算了丝状发光器件的电流密度、电压、载流子浓度和增益分布。
The profiles of junction current and voltage and carrier-concentration in an injection laser with filament were calculated on the basis of a simple model.
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