我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
已经证实气体团束轰击对表面沾污具有很高的清除率，同时却引起较低的损伤。
A high removal rate of surface impurities by ion cluster bombardment has been confirmed in connection with low damage effects.
本文设计的加入附加电极的方法大约能将离子轰击对阴极的损伤减少一半。
In this thesis, we demonstrate that this method can decrease the cathode damage to a half degree of the structure without ion trap.
本文设计的加入附加电极的方法大约能将离子轰击对阴极的损伤减少一半。
In this thesis, we demonstrate that this method can decrease the cathode damage to a half degree of the structure without ion trap.
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