本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
实验表明，氩气放电相邻脉冲之间的瞬时电压间隔是稳定的，而氦气的却是起伏变化的。
Under the same discharge conditions, the numbers of current pulses per half cycle for helium discharge are more than that for argon discharge.
实验表明，氩气放电相邻脉冲之间的瞬时电压间隔是稳定的，而氦气的却是起伏变化的。
Under the same discharge conditions, the numbers of current pulses per half cycle for helium discharge are more than that for argon discharge.
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