本文探讨具有两个负阻区的微分负阻器件的电路合成法实现问题。
The negative differential resistance devices with two negative resistance regions (twin-peak NDR devices) can be built by circuit synthesis approach.
光电双向负阻晶体管(PBNRT)是一种新型S型光电负阻器件。
The photo-bidirectional negative resistance transistor (PBNRT) is a novel "s" type photoelectric negative resistance device.
由于光电负阻器件具有双稳和自锁特性，这种非线性光耦合器具有响应保持功能。
With the bistability and self locking of the silicon photo negative resistance devices, these non linear photoisolators exhibit response maintaining function for the input signal.
将发光器件和硅光电负阻器件面对面地封装在一起，其间实现电隔离，构成一种新型光耦合器。
A new type of photo isolator has been developed by packing light emitting devices with silicon photo negative resistance devices face to face to realize electrical isolation.
全面介绍了从硅光电负阻器件上发现的几种光电控制功能，为进一步开发应用这类器件奠定了基础。
Various of photo-controlled functions discovered from silicon photo-negative resistance devices are presented in this paper.
在此实验基础上研制得到一种双向两端S型负阻器件(TBNRD器件).本文还对该器件产生负阻的原因进行了理论分析。
Based on this, a Two-terminal Bidirectional negative resistance Device (TBNRD) is fabricated and the theory of the negative resistance is studied.
在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件，室温下可以达到较高的电流峰谷比5。
The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.
本文对它的光电负阻特性进行了数值模拟和实验研究，给出了器件等效电路。
Its photoelectric negative resistance characteristics were investigated both by experiment and numerical simulation and its equivalent circuit is proposed.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
对一个SOI结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.
在对负阻元器件特性进行研究和分析的基础上引出负阻效应的概念，对负阻效应产生方式和原理进行了论述。
Based on the research on the characteristic of the dynatron component and parts of an apparatus, the concept of dynatron effect was educed, and the engendering mode and principle was discussed.
该结构降低了器件的寄生电容，改善了敏感薄膜的负阻特性，适用于共振隧穿效应陀螺。
The structure can reduce the parasitic capacitance of the sensor, improve the negative resistance characteristics of the sensitive film, and be used in micro gyroscope.
对负阻效应在实际几种元器件中的存在及特性进行了研究和证明，重点研究了利用运算放大器构成的负阻抗变换器的变换阻抗性质。
The existence and characteristics of dynatron effect in the components and parts of several apparatus have been studied and proved in this paper.
最后，对不同结构和工艺参数的三端bnrt进行了模拟，总结出器件结构和工艺参数对负阻特性的影响。
Finally, 3-terminal BNRT with different structure and process parameters is simulated, and the influence of device structure and process parameters upon negative characteristics is summarized.
最后，对不同结构和工艺参数的三端bnrt进行了模拟，总结出器件结构和工艺参数对负阻特性的影响。
Finally, 3-terminal BNRT with different structure and process parameters is simulated, and the influence of device structure and process parameters upon negative characteristics is summarized.
应用推荐