本文报道了MIM隧道二极管的发光和负阻现象，用梯形势垒计算了电流-电压特性。
This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve.
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
但是，却很少有人知道，一些普通的NPN三极管，如2N2222、2N3904和 2N4401，在反向偏置时也表现出负阻特性。
What's not so well known is that some ordinary NPN transistors such as the 2N2222, 2N3904 and 2N4401 exhibit negative resistance when reversed biased.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
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